All-Optical Phase Memory Circuit Based on Two Coupled Lasers and External Optical Injection

We propose a volatile static all-optical memory capable of storing phase information slowly-varying electric field. The scheme and its realization (a circuit) are based on two mutually coupled lasers subject to external optical injection. proposed circuit has single input for write hold operations opposite-sign outputs reading the memory. operates with wavelength light, direction propagation, without need switch state polarization. prove mathematically that arrangement equilibrium points may discreetly quantify store in bistable manner. is studied numerically solid-state semiconductor zero non-zero linewidth enhancement factors, respectively. Simulations rate equation system confirm essential findings. Using typical parameters laser optimizing possibly wide range operation, write-read were simulated using PRBS-9 at 1 Gb/s negligible errors. will enable integrated implementations future signal processing computing systems.